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PECVD plasma enhanced chemical vapor deposition equipment



§Device Features
◆ using industrial computer on the process time, temperature, gas flow, valve action, reaction chamber pressure to achieve automatic control.
◆ Imported pressure control system, closed-loop system, high stability.
◆ Imported corrosion-resistant stainless steel pipe fittings, valves, ensure gas tightness.
◆ with a sound alarm function and the safety interlocks.
◆ Have over temperature alarm and under temperature alarm, MFC alarm reaction chamber pressure alarm, RF alarm, high air pressure alarm, N2 pressure alarm. Flow alarm.
Type
◆ process is completely free from outside interference environment, process quality and full control; toxic exhaust directed to collect, centralize emissions; safer and environmentally friendly.
◆ loading Quantity: 320 (125 * 125) / 255 (156 * 156) / per tube
◆ purification station cleanliness: 100 (10 000 plants)?
◆ degree of automation: automatic control of temperature and process. Master thermostat module used in Japan conductive or similar brands, you can reach the control accuracy of ± 0.5 ℃. ?
◆ get to take tablets by: Cantilever sliding boat.
Main technical indicators
◆ Temperature range: 150 ~ 800 ℃
◆ Ultimate vacuum: better than 1Pa
◆ Pressure adjustment range: 13 ~ 300Pa continuously adjustable, closed-loop control
◆ RF power: 40KHz continuously adjustable
◆ zone length (150 ~ 400 ℃): 1000mm
◆ temperature zone stability (400 ℃): ± 2 ℃
◆ temperature zone stability (<400 ℃): ± 3 ℃
◆ Temperature Gradient: 0 ~ 30 ℃ / 1000mm adjustable
◆ deposition rate: 30nm/min
◆ Deep refractive index: 1.9 to 2.2
◆ maximum controllable heating rate: 15 ℃ / min
◆ Maximum cooling rate: 5 ℃ / min
Process indicators:
Chip ± 3%, inter-chip ± 3%, ± 3% between batches
 

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