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VGF GaAs single crystal furnace method


Application: mainly used for 2 to 6 inches monocrystalline germanium, gallium arsenide and other compound crystal growth
Product Features:
◆ Industrial Computer Control System (WINDOWS system interface, easy to operate simple)
◆ key components are imported to ensure the high reliability of equipment
◆ High precision temperature control, temperature zone temperature control and good stability
◆ with power alarm, over / under temperature alarm, over-temperature alarm limits and other security features
◆ crystal growth uniformity, high reproducibility
The main technical indicators
◆ Working temperature: 600 ~ 1280 ℃
◆ Adaptation crystal size: 2 to 6 inches
◆ loading capacity: 10Kg / stove
◆ heating control: 7 segment control
◆ Temperature Zone Length: 800mm ± 0.5 ℃ (1000 ~ 1280 ℃)
◆ Maximum heating rate: 15 ℃ / min
◆ Lifting stroke: 900mm
◆ Minimum lifting speed (VB): 0.1mm / h
Equipment: synthesis furnace, ingot furnace, oxygen sealed tube furnace
 

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