Crystal materials growth equipment
VGF, HB, HGF, VB Features:
★ For compounds such as GaAs crystal growth
★ form of the structure: vertical growth, horizontal growth
★ Press the growth pattern: Gradient Growth and mobile growth
★ Crystal Growth Size: 2-6 inches
★ Equipment Classification: HB, HGF, VGF, VB
★ provide dedicated Ⅲ - Ⅴ, Ⅱ - Ⅵ compound semiconductor crystal film growth made special equipment to meet the compound semiconductor device manufacturing, research and development processes.

The main technical indicators:
★ structure type: single-tube horizontal, furnace body can move around
★ Suitable for 2 ~ 4 "crystal growth process (can be customized).
★ furnace effective heating length: 1600mm
★ Maximum working temperature: 1300 ℃
★ temperature zone accuracy (static closed tube): ± 0.5 ℃
★ heating rate (room temperature ~ 1260 ℃): oblique controllable variable heating rate at 0 ~ 15 ℃ / min
★ cooling (1300 ℃ ~ 900 ℃): 0 ~ 5 ℃ / min
★ Power supply: three-phase five-wire ~ 380V ± 10%, 50Hz